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<ArticleSet>
  <ARTICLE>
    <Journal>
      <PublisherName>مرکز منطقه ای اطلاع رسانی علوم و فناوری</PublisherName>
      <JournalTitle>Journal of Information Systems and Telecommunication (JIST) </JournalTitle>
      <ISSN>2322-1437</ISSN>
      <Volume>4</Volume>
      <Issue>13</Issue>
      <PubDate PubStatus="epublish">
        <Year>2016</Year>
        <Month>3</Month>
        <Day>24</Day>
      </PubDate>
    </Journal>
    <ArticleTitle>A Novel Ultra-Broad Band, High Gain, and Low Noise Distributed Amplifier Using Modified Regulated Cascode Configuration (MRGC) Gain-Cell</ArticleTitle>
    <VernacularTitle>A Novel Ultra-Broad Band, High Gain, and Low Noise Distributed Amplifier Using Modified Regulated Cascode Configuration (MRGC) Gain-Cell</VernacularTitle>
    <FirstPage>1</FirstPage>
    <LastPage>10</LastPage>
    <ELocationID EIdType="doi">10.7508/jist.2016.01.007</ELocationID>
    <Language>en</Language>
    <AuthorList>
      <Author>
        <FirstName>Zainab</FirstName>
        <LastName>Baharvand</LastName>
        <Affiliation>Graduate University of Advanced Technology</Affiliation>
      </Author>
      <Author>
        <FirstName>Ahmad</FirstName>
        <LastName>Hakimi</LastName>
        <Affiliation>Shahid Bahonar University of Kerman</Affiliation>
      </Author>
    </AuthorList>
    <History PubStatus="received">
      <Year>2016</Year>
      <Month>4</Month>
      <Day>27</Day>
    </History>
    <Abstract>In this paper, an ultra-broad bandwidth, low noise, and high gain-flatness CMOS distributed amplifier (CMOS-DA) based on a novel gain-cell is presented. The new gain-cell that enhances the output impedance as a result the gain substantially over conventional RGC is the improved version of Regulated Cascode Configuration (RGC). The new gain-cell based CMOS-DA is analyzed and simulated in the standard 0.13 μm-CMOS technology. The simulated results of the proposed CMOS-DA are included 14.2 dB average power gain with less than ± 0.5 dB fluctuations over the 3-dB bandwidth of 23 GHz while the simulated input and output return losses (S11 and S22) are less than -10 dB. The IIP3 and input referred 1-dB compression point are simulated at 15 GHz and achieved +8 dBm and -6.34 dBm, respectively. The average noise figure (NF) in the entire interest band has a low value of 3.65 dB, and the DC power dissipation is only 45.63 mW. The CMOS-DA is powered by 0.9 V supply voltage. Additionally, the effect of parameters variation on performance specifications of the proposed design is simulated by Monte Carlo simulations to ensure that the desired accuracy is yielded.</Abstract>
    <ObjectList>
      <Object Type="Keyword">
        <Param Name="Value">Ultra-broad Band</Param>
      </Object>
      <Object Type="Keyword">
        <Param Name="Value">CMOS Distributed Amplifier</Param>
      </Object>
      <Object Type="Keyword">
        <Param Name="Value">Modified Regulated Cascode Configuration (MRGC)</Param>
      </Object>
      <Object Type="Keyword">
        <Param Name="Value">Low Noise</Param>
      </Object>
    </ObjectList>
    <ArchiveCopySource DocType="Pdf">http://jist.ir/fa/Article/Download/14799</ArchiveCopySource>
  </ARTICLE>
</ArticleSet>